| PART |
Description |
Maker |
| EP7312-IV-90 EP7312-EB-90 EP7312-IR-90 EP7312-CB-9 |
HIGH-PERFORMANCE, LOW-POWER SYSTEM ON CHIP WITH SDRAM AND ENHANCED DIGITAL AUDIO INTERFACE 32-BIT, FLASH, 90 MHz, RISC MICROCONTROLLER, PBGA204
HIGH-PERFORMANCE, LOW-POWER SYSTEM ON CHIP WITH SDRAM AND ENHANCED DIGITAL AUDIO INTERFACE 高性能，低功耗的片上系统的SDRAM和增强数字音频接
|
Cirrus Logic, Inc.
CIRRUS LOGIC INC
|
| EM6A9325BG-1H/LG |
4M x 32 Low Power SDRAM (LPSDRAM)
|
Etron Technology, Inc.
|
| MT46H64M16LFBF-6 |
Mobile Low-Power DDR SDRAM
|
Micron Technology
|
| RMLD232UAW-7E |
2M x 32 bit Low Power DDR SDRAM
|
Emerging Memory & Logic Solutions Inc
|
| CMS3232LAX-75EX |
32M(1Mx32) Low Power SDRAM
|
FIDELIX
|
| EMLS232UA EMLS232UAW-6 EMLS232UAW-6E |
512K x 32 x 4Banks Low Power SDRAM Specificaton
|
Emerging Memory & Logic Solutions Inc
|
| M65KG256AB |
256Mbit (4 Banks x 4M x 16) 1.8V Supply, 133MHz Clock Rate, DDR Low Power SDRAM
|
STMicroelectronics
|
| M65KG256AB8W8 |
256Mbit (4 Banks x 4M x 16) 1.8V Supply, 133MHz Clock Rate, DDR Low Power SDRAM
|
STMicroelectronics
|
| W9864G6JH W9864G6JH-7S W9864G6JH-6I W9864G6JH-5 W9 |
1M ?4 BANKS ?16 BITS SDRAM
Self Refresh Current: Standard and Low Power, Sequential and Interleave Burst
|
http://
Winbond
|
| M65KA512AB8W3 M65KA512AB |
512Mbit (4 Banks x 8M x 16), 133 MHz Clock Rate, Bare Die, 1.8 V Supply, Low Power SDRAM
|
STMICROELECTRONICS[STMicroelectronics]
|
| HYS64V4200GDL-7.5 HYS64V8220GDL HYS64V4200GDL-8-X |
x64 SDRAM Module
3.3 V SDRAM Modules(3.3 V 同步动态RAM模块)
3.3 V SDRAM Module(3.3 V SDRAM 模块)
4M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, ZMA144
|
SIEMENS AG
INFINEON TECHNOLOGIES AG
|
| IMP1233D IMP1810 IMP1811 IMP1812 IMP1815 IMP1816 I |
4.125V power reset
RELAY 024VDC 01A DPDT-XX FORM:2C UC
Bi-Lobe Standard Metal Shell Nano Offset Connector
Low Power 5V/3.0V P Reset
Low Power/ 5V/ P Reset
Low Power, 5V, 楼矛P Reset
Low Power 5V P Reset
Low Power, 5V, P Reset
Low Power, 5V, μP Reset
4.375V power reset
|
IMP INC.
IMP Inc
IMP[IMP, Inc]
IMP[IMP Inc]
|
